Triple layer anti-reflective hard mask

Triple layer anti-reflective hard mask

3434 34 A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (SiN) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or SiNand forming a second...

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Hauptverfasser: Ghandehari, Kouros, Tokuno, Hirokazu, Matsumoto, David, Raeder, Christopher H, Foster, Christopher, Qian, Weidong, Ngo, Minh Van
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Sprache:eng
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creator Ghandehari, Kouros
Tokuno, Hirokazu
Matsumoto, David
Raeder, Christopher H
Foster, Christopher
Qian, Weidong
Ngo, Minh Van
description 3434 34 A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (SiN) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or SiNand forming a second layer of anti-reflective material over the first layer. The method also includes using the first layer, second layer and layer of SiON, SiRN or SiNas a mask when etching a pattern in the layer of semiconducting material.
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title Triple layer anti-reflective hard mask
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