Triple layer anti-reflective hard mask

Triple layer anti-reflective hard mask

3434 34 A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (SiN) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or SiNand forming a second...

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Bibliographische Detailangaben
Hauptverfasser: Ghandehari, Kouros, Tokuno, Hirokazu, Matsumoto, David, Raeder, Christopher H, Foster, Christopher, Qian, Weidong, Ngo, Minh Van
Format: Patent
Sprache:eng
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Zusammenfassung:3434 34 A method includes forming a layer of silicon oxynitride (SiON), silicon rich nitride (SiRN) or silicon nitride (SiN) over a layer of semiconducting material. The method further includes forming a first layer of anti-reflective material over the layer of SiON, SiRN or SiNand forming a second layer of anti-reflective material over the first layer. The method also includes using the first layer, second layer and layer of SiON, SiRN or SiNas a mask when etching a pattern in the layer of semiconducting material.