System and method for using siliciding PECVD silicon nitride as a dielectric anti-reflective coating and hard mask

An electronic apparatus is disclosed that comprises a silicon nitride material that has an increased silicon content. The silicon nitride material is manufactured by exposing plasma enhanced chemical vapor deposition (PECVD) silicon nitride to an increased flow of silane while the PECVD silicon nitride is being deposited. The material has anti-reflective coating (ARC) properties and can also be used as a hard mask. When the material is covered with cobalt the material forms conductive cobalt silicide when the cobalt is annealed. A method for siliciding the PECVD silicon nitride is also disclosed.