Semiconductor device and manufacturing method therefor
a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode ind...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Yutani, Naoki |
| description | a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode independently of each other. Bumps (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes of non-defective units among the units formed on the SiC chip , meanwhile bumps are not formed on the external output electrodes of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes are connected in parallel to the exterior of the device through the bumps , and a wiring layer and an external lead of a wiring substrate ; thus, only the external output electrodes of the non-defective units are connected in parallel with each other. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07880763</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07880763</sourcerecordid><originalsourceid>FETCH-uspatents_grants_078807633</originalsourceid><addsrcrecordid>eNrjZDALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUpNyy_iYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDcwsLA3MzYmAglAK3_Lw8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and manufacturing method therefor</title><source>USPTO Issued Patents</source><creator>Yutani, Naoki</creator><creatorcontrib>Yutani, Naoki ; Mitsubishi Denki Kabushiki Kaisha</creatorcontrib><description>a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode independently of each other. Bumps (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes of non-defective units among the units formed on the SiC chip , meanwhile bumps are not formed on the external output electrodes of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes are connected in parallel to the exterior of the device through the bumps , and a wiring layer and an external lead of a wiring substrate ; thus, only the external output electrodes of the non-defective units are connected in parallel with each other.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7880763$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7880763$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yutani, Naoki</creatorcontrib><creatorcontrib>Mitsubishi Denki Kabushiki Kaisha</creatorcontrib><title>Semiconductor device and manufacturing method therefor</title><description>a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode independently of each other. Bumps (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes of non-defective units among the units formed on the SiC chip , meanwhile bumps are not formed on the external output electrodes of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes are connected in parallel to the exterior of the device through the bumps , and a wiring layer and an external lead of a wiring substrate ; thus, only the external output electrodes of the non-defective units are connected in parallel with each other.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDALTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUpNyy_iYWBNS8wpTuWF0twMCm6uIc4euqXFBYklqXklxfHpRYkgysDcwsLA3MzYmAglAK3_Lw8</recordid><startdate>20110201</startdate><enddate>20110201</enddate><creator>Yutani, Naoki</creator><scope>EFH</scope></search><sort><creationdate>20110201</creationdate><title>Semiconductor device and manufacturing method therefor</title><author>Yutani, Naoki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_078807633</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Yutani, Naoki</creatorcontrib><creatorcontrib>Mitsubishi Denki Kabushiki Kaisha</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yutani, Naoki</au><aucorp>Mitsubishi Denki Kabushiki Kaisha</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and manufacturing method therefor</title><date>2011-02-01</date><risdate>2011</risdate><abstract>a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode independently of each other. Bumps (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes of non-defective units among the units formed on the SiC chip , meanwhile bumps are not formed on the external output electrodes of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes are connected in parallel to the exterior of the device through the bumps , and a wiring layer and an external lead of a wiring substrate ; thus, only the external output electrodes of the non-defective units are connected in parallel with each other.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_uspatents_grants_07880763 |
| source | USPTO Issued Patents |
| title | Semiconductor device and manufacturing method therefor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T09%3A42%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yutani,%20Naoki&rft.aucorp=Mitsubishi%20Denki%20Kabushiki%20Kaisha&rft.date=2011-02-01&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07880763%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |