Semiconductor device and manufacturing method therefor

a A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units is formed on an SiC chip , and each of the units has an external output electrode independently of each other. Bumps (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes of non-defective units among the units formed on the SiC chip , meanwhile bumps are not formed on the external output electrodes of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes are connected in parallel to the exterior of the device through the bumps , and a wiring layer and an external lead of a wiring substrate ; thus, only the external output electrodes of the non-defective units are connected in parallel with each other.