In situ monitoring of wafer charge distribution in plasma processing

In situ monitoring of wafer charge distribution in plasma processing

A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Boyd, Kevin M, Gallo, James A, Higgins, Edward P, Reath, Mark L, Shiffler, Barbara L, Wong, Justin
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.