Method for the production of a semiconductor component comprising a planar contact, and semiconductor component
In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components on a substrate, at least one electronic component is applied to a substrate, and an isolation layer is applied to...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In a method for producing a semiconductor component, in particular a semiconductor structure having a surface structure or topography which is produced by means of electronic components on a substrate, at least one electronic component is applied to a substrate, and an isolation layer is applied to the topography which is produced by means of the at least one component on the substrate. Contact-making openings are then produced in the isolation layer at contact points for the at least one electronic component, the isolation layer and the contact points in the contact-making openings are planar-metallized, and the metallization is structured in order to produce electrical connections, with the isolation layer having a glass coating. |
---|