Implanted counted dopant ions

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms implanted in regions of a substrate that are substantially intrinsic semiconductor. One or more doped surface regions of the substrate are metallized to form electrodes and a counted number...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Andresen, Soren, Dzurak, Andrew Steven, Gauja, Eric, Hearne, Sean, Hopf, Toby Felix, Jamieson, David Norman, Mitic, Mladen, Prawer, Steven, Yang, Changyi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms implanted in regions of a substrate that are substantially intrinsic semiconductor. One or more doped surface regions of the substrate are metallized to form electrodes and a counted number of dopant ions are implanted in a region of the substantially intrinsic semiconductor.