Nitride semiconductor light emitting device

The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a subst...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, Sun Woon, Kim, Je Won, Kang, Sang Won, Song, Keun Man, Oh, Bang Won
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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