Nitride semiconductor light emitting device

The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a subst...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Sun Woon, Kim, Je Won, Kang, Sang Won, Song, Keun Man, Oh, Bang Won
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.