Electrochemical device

2 32 2 An electrochemical device including: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 μm; (b) a TiOlayer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount where the layer is MtiO, and where the layer has a thickness from 5 nm to 1 mm; (c) a grid of inert metal on the TiOlayer, arranged so as to be able to apply a electric field across the TiOlayer; and (d) an ohmic contact on the semiconductor layer.