Inverter non-volatile memory cell and array system

NVM arrays include rows and columns of NVM cells comprising a floating gate and a four transistor storage element. Supply voltage for selected storage elements is turned off during a programming and an erase mode. Isolation transistors for each NVM cell or for each row of NVM cells may be used to co...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Bin, Wang, Shih-Hsin, Colleran, William T
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:NVM arrays include rows and columns of NVM cells comprising a floating gate and a four transistor storage element. Supply voltage for selected storage elements is turned off during a programming and an erase mode. Isolation transistors for each NVM cell or for each row of NVM cells may be used to control the supply voltage.