Voltage supply circuit of semiconductor device

The purpose of the present invention is to decrease a leak current of a voltage supply circuit using a MOS transistor. This voltage supply circuit comprises an n-channel MOS transistor having a low threshold voltage, the drain of which is connected to the power supply voltage, and a p-channel MOS transistor, the source of which is connected to the source of the n-channel MOS transistor and which supplies a voltage vii from the drain to a load circuit. Since a voltage V gs=1 V is applied to the gate-sources of the p-channel MOS transistor when said circuit is on standby, the p-channel MOS transistor operates in a larger cut-off region than an ordinary cut-off region.