Metal-insulator-metal capacitor structure having low voltage dependence

A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower elec...

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Bibliographische Detailangaben
Hauptverfasser: Yeh, Der-Chyang, Lin, Chie-Iuan, Lee, Chuan-Ying, Chao, Yi-Ting, Chen, Ming-Hsien
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor capacitor device. A dielectric layer is on a substrate. A stack capacitor structure is disposed in the dielectric layer and comprises first and overlying second MIM capacitors electrically connected in parallel. The first and second MIM capacitors have individual upper and lower electrode plates and different compositions of capacitor dielectric layers.