Method for manufacturing a semiconductor device using the self aligned contact (SAC) process flow for semiconductor devices with aluminum metal gates

In one embodiment, a method, comprises forming a diffusion layer on a semiconductor substrate, forming a selectively deposited metal or metal alloy on an aluminum gate structure by removing an aluminum oxide layer from the aluminum gate structure and depositing a zinc layer on the aluminum gate structure by a zincating process, and selectively depositing a sacrificial metal or metal alloy cap on the aluminum gate layer by displacing the zinc layer. This embodiment enables the SAC process flow on devices with Aluminum gates.