Method of reducing critical dimension bias during fabrication of a semiconductor device

Method of reducing critical dimension bias during fabrication of a semiconductor device

An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

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Bibliographische Detailangaben
Hauptverfasser: Bencher, Christopher Dennis, Montgomery, Melvin Warren, Buxbaum, Alexander, Lee, Yung-Hee Yvette, Ding, Jian, Almogy, Gilad, Yeh, Wendy H
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.