Atomic layer deposition of tantalum-containing films using surface-activating agents and novel tantalum complexes

Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.

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Bibliographische Detailangaben
Hauptverfasser: Thompson, Jeffery Scott, Radzewich, Catherine E
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Atomic layer deposition processes for the formation of tantalum-containing films on surfaces are provided. Also provided are novel tantalum complexes that can be used as tantalum precursors in the disclosed deposition processes.