Image sensor with a capacitive storage node linked to transfer gate
A CMOS imaging system with increased charge storage capacitance of pixels yet decreased physical size, kTC noise and active area. A capacitor is linked to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A CMOS imaging system with increased charge storage capacitance of pixels yet decreased physical size, kTC noise and active area. A capacitor is linked to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel. |
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