Method for manufacturing an integrated circuit including a transistor

Method for manufacturing an integrated circuit including a transistor

The present invention relates to a transistor comprising a gate channel area and a gate stack having mechanical stress arranged on the gate channel area.

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Bibliographische Detailangaben
Hauptverfasser: Goldbach, Matthias, Landgraf, Erhard, Stadtmueller, Michael, Haupt, Moritz, Schmidbauer, Sven, Mono, Tobias, Radecker, Jorg
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:The present invention relates to a transistor comprising a gate channel area and a gate stack having mechanical stress arranged on the gate channel area.