Semiconductor integrated circuit device and method of manufacturing the same

A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transis...

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Bibliographische Detailangaben
Hauptverfasser: Ahn, Jong-hyon, Yoo, Jae-cheol, Youn, Ki-seog, Roh, Kwan-jong, Bae, Su-gon, Kim, Ki-young
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.