Method for patterning a photo-resist in an immersion lithography process
A method for patterning a photo-resist in an immersion lithography process is described. The method includes forming a photo-resist layer above a substrate. A hydrophobic and contrast-enhancing barrier layer is formed above the photo-resist layer. The photo-resist layer is exposed, through the hydro...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for patterning a photo-resist in an immersion lithography process is described. The method includes forming a photo-resist layer above a substrate. A hydrophobic and contrast-enhancing barrier layer is formed above the photo-resist layer. The photo-resist layer is exposed, through the hydrophobic and contrast-enhancing barrier layer, to a light source. The photo-resist layer is developed to provide a patterned photo-resist layer. |
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