High temperature anneal with improved substrate support

A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that rend...

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Bibliographische Detailangaben
Hauptverfasser: Waldhauer, Ann P, Chacin, Juan M, Burrows, Brian H
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.