Redundant non-volatile memory cell

Two floating gate devices are arranged in a redundant configuration in a non-volatile memory (NVM) such that stress induced leakage current (SILC) or other failures do not result in a complete loss of memory storage. The redundant NVM may be arranged as a series configuration, a parallel configuration, a single-ended device, a differential device, a simple logic circuit function, a complex logic circuit function, and/or as part of an RFID tag system.