Non-volatile static memory cell

A static memory cell comprising a pair of cross-coupled inverters which is "shadowed" with non-volatile memory elements so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. The non-volatile cells are programmed with opposite data...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Cuppens, Roger, Ditewig, Anthonie Meindert Herman
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A static memory cell comprising a pair of cross-coupled inverters which is "shadowed" with non-volatile memory elements so that data written in the static memory can be stored in the non-volatile cell, but also can be recalled later. The non-volatile cells are programmed with opposite data to increase the robustness of the retrieval process, and they are cross-coupled to the internal nodes (A, B) of the static memory cell, one the non-volatile cells having a control gate connected to B and its source to A, and the other non-volatile element having a control gate connected to A and its source to B. The drain of each non-volatile element is connected by means of a respective pMOS transistor to a program supply means.