Masks and methods of manufacture thereof

Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schroeder, Uwe Paul, Wu, Chung-Hsi J
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one feature of the semiconductor device. The method includes forming an assist feature in the pattern for the at least one feature, wherein the assist feature extends completely through the pattern for the at least one feature.