MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation

4 4 A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiHat a first flow rate, and...

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Bibliographische Detailangaben
Hauptverfasser: Brisbin, Douglas, Chaparala, Prasad, O'Connell, Denis Finbarr, McCulloh, Heather, Drizlikh, Sergei
Format: Patent
Sprache:eng
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Zusammenfassung:4 4 A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiHat a first flow rate, and the second SiON layer is formed with SiHat a second higher flow rate.