MRAM cell using multiple axes magnetization and method of operation
A magnetic random access memory cell includes a free layer structure and a reference layer structure including an anti-ferromagnetic layer structure pinning the magnetization orientation of the reference layer structure, the reference layer structure having a higher magnetic coercivity and being mag...
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| Sprache: | eng |
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| Zusammenfassung: | A magnetic random access memory cell includes a free layer structure and a reference layer structure including an anti-ferromagnetic layer structure pinning the magnetization orientation of the reference layer structure, the reference layer structure having a higher magnetic coercivity and being magnetically polarizable bidirectional and parallel to more than one axes by a magnetic field applied during a writing procedure so as to store information in the reference layer structure while heating the anti-ferromagnetic layer structure above its blocking temperature. |
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