System and method for providing a low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection

A system and method are disclosed for providing an integrated circuit low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection. In an advantageous embodiment of the present invention, a transfer gate of the input/output structure comprises at least one thick gate...

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Bibliographische Detailangaben
1. Verfasser: Wert, Joseph D
Format: Patent
Sprache:eng
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Zusammenfassung:A system and method are disclosed for providing an integrated circuit low voltage thin gate input/output structure with thick gate overvoltage/backdrive protection. In an advantageous embodiment of the present invention, a transfer gate of the input/output structure comprises at least one thick gate native (or depletion) n-channel metal oxide semiconductor (NMOS) transistor that is connected to an output pad node of the input/output structure. The thick gate native (or depletion) NMOS transistor prevents current from the output pad node from entering the input/output structure when a voltage level of the output pad node is high.