Method for forming nitride crystals

4 −2A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, wit...

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Bibliographische Detailangaben
Hauptverfasser:	Tysoe, Steven Alfred, Park, Dong-Sil, Leman, John Thomas, D'Evelyn, Mark Philip, Narang, Kristi Jean, Hong, Huicong
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	4 −2A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 10cm.