Single crystal pulling apparatus

a a a A single crystal pulling apparatus having a heater melting material silicon by thermal radiation from a cylindrical exothermic part which surrounds a crucible inside a furnace body and an electromagnet which is prepared to surround the furnace body and applies a transverse magnetic field to the silicon liquid melt in the crucible is provided. A length h in a pull-up axis direction in the exothermic part of the heater is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible a first middle position in the pull-up axis direction in the exothermic part is arranged below a second middle position in the pull-up axis direction in the electromagnet and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible