High speed, low supply voltage tolerant bootstrapped word line driver with high voltage isolation

Disclosed are a circuit and a method for a high speed, low supply voltage tolerant bootstrapped word line driver with high voltage isolation. The circuit includes a low voltage driver. A gate bootstrapped transistor is coupled to the low voltage driver. A first transistor is coupled to an output ter...

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Bibliographische Detailangaben
Hauptverfasser: Raghavan, Vijay Kumar Srinivasa, Hirose, Ryan Tasuo
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed are a circuit and a method for a high speed, low supply voltage tolerant bootstrapped word line driver with high voltage isolation. The circuit includes a low voltage driver. A gate bootstrapped transistor is coupled to the low voltage driver. A first transistor is coupled to an output terminal of the gate bootstrapped transistor. A substrate of the first transistor is coupled to a negative bias signal. A second transistor is coupled to a gate terminal of the gate bootstrapped transistor. A substrate of the first transistor is coupled to a negative bias signal.