TaN integrated circuit (IC) capacitor

TaN integrated circuit (IC) capacitor

A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Huber, Michael LeRoy, Hendy, Gregory Lee, Lafferty, Evelyn Anne, Harakas, George Nicholas, Pavone, Salvatore Frank, Pasker, Blake Ryan, Hazelton, Courtney Michael, Klawinsky, James Wayne
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A capacitor is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor generally comprises a top conductive plate, a capacitor dielectric and a bottom conductive plate that respectively comprise a patterned layer of tantalum nitride TaN, a layer of a nitride based material and a layer of patterned polysilicon.