Method for forming metal pattern and method for forming gate electrode in semiconductor device using the same
A method for forming a metal pattern in a semiconductor device includes forming an etch stop layer over a semi-finished substrate including a metal layer, forming a hard mask over the etch stop layer, etching the hard mask to form a hard mask pattern exposing the etch stop layer, and etching the etc...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for forming a metal pattern in a semiconductor device includes forming an etch stop layer over a semi-finished substrate including a metal layer, forming a hard mask over the etch stop layer, etching the hard mask to form a hard mask pattern exposing the etch stop layer, and etching the etch stop layer and the metal layer using the hard mask pattern. |
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