Method for correcting for asymmetry of threshold voltage shifts
A method for correcting of asymmetric shifts in threshold voltage of transistors caused by effects such as negative-bias temperature instability (NBTI) during burn-in. The method may include providing logic patterns to an integrated circuit, such that devices that were stressed during burn-in are re...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for correcting of asymmetric shifts in threshold voltage of transistors caused by effects such as negative-bias temperature instability (NBTI) during burn-in. The method may include providing logic patterns to an integrated circuit, such that devices that were stressed during burn-in are relaxed, and devices that suffered less stress during burn-in are stressed. |
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