Lateral semiconductor diode and method for fabricating it
The invention relates to a lateral semiconductor diode, in which contact metal fillings, which run in trenches in particular in a silicon carbide body, are interdigitated at a distance from one another, and a rectifying Schottky or pn junction is provided.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The invention relates to a lateral semiconductor diode, in which contact metal fillings, which run in trenches in particular in a silicon carbide body, are interdigitated at a distance from one another, and a rectifying Schottky or pn junction is provided. |
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