Annular damascene vertical natural capacitor

A method for forming a vertical natural capacitor in an integrated circuit is disclosed. In one embodiment, the method includes forming a first set of concentric conductive annular structures in a first metal layer of an integrated circuit. The first set includes a first electrode and a second elect...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Anderson, Felix Patrick, McDevitt, Thomas Leddy, Stamper, Anthony Kendall
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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