Semiconductor device having a low concentration layer formed outside a drift layer
A semiconductor device includes a substrate, a first electrode and a second electrode formed on the substrate, and a drift layer which is formed between the first electrode and the second electrode, and becomes conduction in an ON state, and becomes depletion in an OFF state, a low concentration lay...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor device includes a substrate, a first electrode and a second electrode formed on the substrate, and a drift layer which is formed between the first electrode and the second electrode, and becomes conduction in an ON state, and becomes depletion in an OFF state, a low concentration layer which is formed outside of the drift layer, and is opposite in polarity to that of the drift layer. |
|---|