RF power transistor device with metal electromigration design and method thereof
An RF power transistor with a metal design comprises a drain pad and a plurality of metal drain fingers extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (---), each section of metal including of one or more branch (---) of metal having a m...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | An RF power transistor with a metal design comprises a drain pad and a plurality of metal drain fingers extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (---), each section of metal including of one or more branch (---) of metal having a metal width maintained within a bamboo regime. |
|---|