Electric device comprising an LDMOS transistor

Electric device comprising an LDMOS transistor

The LDMOS transistor of the invention is provided with a stepped shield structure and/or with a first and a second drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.

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Bibliographische Detailangaben
Hauptverfasser: Theeuwen, Stephan Jo Cecile Henri, Van Rijs, Freerk, Hammes, Petra Christina Anna, Pouwel, Ivo Bernhard, Jos, Hendrikus Ferdinand Franciscus
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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Beschreibung
Zusammenfassung:The LDMOS transistor of the invention is provided with a stepped shield structure and/or with a first and a second drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.