Method for manufacturing flat substrates
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer deposited on a large-surface substrate, before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer.
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer deposited on a large-surface substrate, before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer. |
|---|