Silicon solar cell and production method thereof

++It is an object of the present invention to provide a silicon solar cell with npp BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate.The solar cell of the present invention is produced by a back side boron diffusion step for diffusing...

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Bibliographische Detailangaben
Hauptverfasser: Joge, Toshio, Araki, Ichiro, Hosoya, Tomonori
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:++It is an object of the present invention to provide a silicon solar cell with npp BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate.The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.