Interconnect structure and process of making the same

Interconnect structure and process of making the same

A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top o...

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Bibliographische Detailangaben
Hauptverfasser: Standaert, Theodorus Eduardus, Davis, Pegeen M, Fitzsimmons, John Anthony, Greco, Stephen Edward, Ko, Tze-Man, Lustig, Naftali Eliahu, Nicholson, Lee Matthew, Sankaran, Sujatha
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.