Transistor using an isovalent semiconductor oxide as the active channel layer
A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table. |
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