Semiconductor structure having recess with conductive metal
A semiconductor structure includes a semiconductor substrate, a recess located in at least one major surface of the substrate, an electrical insulating layer located over the at least one major surface and in the recess, a conductive barrier located over the insulating layer and in the recess and ov...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A semiconductor structure includes a semiconductor substrate, a recess located in at least one major surface of the substrate, an electrical insulating layer located over the at least one major surface and in the recess, a conductive barrier located over the insulating layer and in the recess and over the at least one major surface, a plating seed layer located over the conductive barrier within the recess only, and a conductive metal in the recess only. |
|---|