Semiconductor device and method for producing the same

A semiconductor device, including a first MIS-type transistor formed in a first region of a semiconductor region, the first region being of a first conductivity type, the first MIS-type transistor including: a first gate insulating film formed on the first region; a first gate electrode formed on th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kotani, Naoki, Sebe, Akio, Okazaki, Gen, Tamaki, Tokuhiko
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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