Germanium on glass and glass-ceramic structures
−7A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass o...
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creator | Gadkaree, Kishor Purushottam Danielson, Paul Stephen Dejneka, Matthew John Lapp, Josef Chauncey Pinckney, Linda Ruth |
description | −7A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10/° C. of the linear coefficient thermal of expansion of the germanium first layer. |
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The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10/° C. of the linear coefficient thermal of expansion of the germanium first layer.</description><language>eng</language><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7456057$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64037</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7456057$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Gadkaree, Kishor Purushottam</creatorcontrib><creatorcontrib>Danielson, Paul Stephen</creatorcontrib><creatorcontrib>Dejneka, Matthew John</creatorcontrib><creatorcontrib>Lapp, Josef Chauncey</creatorcontrib><creatorcontrib>Pinckney, Linda Ruth</creatorcontrib><creatorcontrib>Corning Incorporated</creatorcontrib><title>Germanium on glass and glass-ceramic structures</title><description>−7A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. 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The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10/° C. of the linear coefficient thermal of expansion of the germanium first layer.</abstract><oa>free_for_read</oa></addata></record> |
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title | Germanium on glass and glass-ceramic structures |
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