Germanium on glass and glass-ceramic structures

Germanium on glass and glass-ceramic structures

−7A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass o...

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Bibliographische Detailangaben
Hauptverfasser: Gadkaree, Kishor Purushottam, Danielson, Paul Stephen, Dejneka, Matthew John, Lapp, Josef Chauncey, Pinckney, Linda Ruth
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:−7A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10/° C. of the linear coefficient thermal of expansion of the germanium first layer.