Method for selectively etching portions of a layer of material based upon a density or size of semiconductor features located thereunder

Method for selectively etching portions of a layer of material based upon a density or size of semiconductor features located thereunder

The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features over a substrate, and then forming a layer of material over the semiconductor features. This method further includes selectively etching portions of the l...

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Bibliographische Detailangaben
Hauptverfasser: Hunt, Kyle, Bhatt, Neel, Hosein, Asadd M, Vialpando, Brian L, Morrison, William R
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features over a substrate, and then forming a layer of material over the semiconductor features. This method further includes selectively etching portions of the layer of material based upon a density or size of the semiconductor features located thereunder, and then polishing remaining portions of the layer of material.