Cleaning method and solution for cleaning a wafer in a single wafer process

42222The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NHOH), hydrogen peroxide (HO), water (HO) and a chelating agent. In an embodiment of the present inv...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Verhaverbeke, Steven, Truman, J. Kelly
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:42222The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NHOH), hydrogen peroxide (HO), water (HO) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.