PIN photodiode structure and fabrication process for reducing dielectric delamination

A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type...

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Bibliographische Detailangaben
Hauptverfasser: Gao, Xiang, Ceruzzi, Alex, Schwed, Steve, Liu, Linlin, Gottfried, Mark
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.